PECVD (STS and Benchmark)
![PECVD STS](/3it/fileadmin/_processed_/1/3/csm_PECVD_21435e6cc8.jpg)
![PECVD Benchmark](/3it/fileadmin/_processed_/d/5/csm_PECVD-Benchmark_78785a4924.jpg)
Description
Deposition of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide and amorphous silicon. Possibility of phosphorus, boron or german doping.
Manufacturer and model
STS - MESC Multiplex
Technical specifications
- Deposition temperature: from 20°C to 380°C
- Frequencies: 13.56 MHz or 380 kHz; Possibility of using a mixed frequency mode
- Maximum power: 1 kW @ 380 kHz, 300 W @ 13.56 MHz
- Gases installed on the system: NH₃, Ar, N₂, B₂H₆ (diluted to 10% in H₂), GeH₄, CH₄, O₂, PH₃ (diluted to 10% in Ar), N₂O, SiH₄,
- Sample size: substrates up to 200 mm in diameter
- Compatible with small samples
Examples of available processes
- Deposition of insulating layers for the production of transistor grids
- Deposition for the manufacture of implantation or engraving masks
- Deposition of doped SiO₂ for the manufacture of waveguides