Plasma Etcher Oxford Estralas

Description

Silicon etching

Manufacturer and model

Oxford Instruments - Plasma Pro 100 Estralas

Technical specifications 

• Electrode temperature : -150°C to 100°C
• ICP Source :  up to 5kW at 2MHz
• Plate source :
  • Up to 300W at 400kHz
  • Up to 600W at 13.56MHz
• Gas installed on the system : Ar, O2, SF6, C4F8, CF4
• Sample size : up to 200mm
• Optical spectrometer (end point) : no

Examples of available processes 

• Bosch process
• Cryogenic etching of Si