Ion implantation Varian CF3000

Description

Ion implantation.  Energy  range from 18 keV to 200 keV

Manufacturer and model

Varian - CF3000

Technical specifications

• Highest acceleration energy : 200 kV
• Typical implantation dose : 10¹¹ to 10¹⁵ per cm²
• Solid, gas and liquid sources 
• Wafer size : 100 mm

Examples of available processes

• Implantation of : H, He, B, C, N, O, F, Mg, P, S, Cl, Ar, Mn, Zn, As, Ag, Sb, Xe,  Bi
• Semi-conductor doping