MDP - Contactless electrical semiconductor characterization

Description

Caractérisation sans contact et non-destructive des propriétés électriques des matériaux.

Manufacturer & model

Freiberg Instruments GmbH MDPspot

Technical specifications

• Laser pulses: 20 ns - 20 ms
• Materials: silicon n and p, from 0.1 Ωcm to 1000 Ωcm
• Thickness: from 100μm to 156mm
• Geometry of the samples: 5mm x 5mm pieces, waffles, bricks.

Examples of available processes

• The system can perform spot measurements but it is possible to manually map with limited accuracy
• Evaluation of the homogeneity of passivation
• Detection of defects / impurities in materials
• Measurement of photoconductivity
• Measuring the lifetime of minority carriers using the microwave-detected photoconductivity (MDP) method or the decay of microwaved photoconductivity (μPCD)