CBE for III-V materials
![CBE for III-V materials](/3it/fileadmin/_processed_/5/e/csm_reacteur_cbe_materiaux_III_V_6a39546346.jpg)
Description
Dedicated to the growth of III-V materials (Arsenides and Phosphides)
Manufacturer and model
VG semicon - V90
Technical specifications
- Wafer size up to 4
- Equipped with ABES, RHEED, Pyrometry and RGA
- Precursors :
- P, PH3 – Phosphine
- As, AsH3 – Arsine
- Ga, TEGa – Triethyl Gallium
- In, TMIn – Trimethyl Indium
- Al, TMAl – Trimethyl Aluminium
- Al, TEAl – Triethyl Aluminium
- Te, DIPTe – Di-isopropyl Tellure
- Si, SiBr4 – Tetrabromure de Silicium
- C, CBr4 – Tetrabromure de Carbone
Examples of available processes
- III-V materials (Arsenides and Phosphides) for optoelectronics
- Available materials in the following diagram