Plasma Etcher RIE

Description

Plasma etching

Manufacturer and model

March - CS-1701

Technical specifications

• Substrate size up to 200mm
• 4 available gases: SF6, O2, CF4, H2 / N2
• Maximum 600W RF power
• Computer Controlled
• Recipes in a file
• Ability to control pressure

Examples of available processes

• Silicon etching
• Etching of SiO2
• Engraving of Si3N4
• Engraving of polyimide and other materials
• Oxygen cleaning
• Changes in surface condition (adhesion, wetting, etc.)
• Treatment with H2 / N2 (forming gas)