Plasma Etcher STS Advanced Oxide AOE

Description

Etching of high-density plasma dielectric materials

Manufacturer and model

STS - AOE

Technical specifications

• Temperature of electrode (plate): -20°C to 70°C
• ICP source: up to 3 kW at 13.56 MHz
• Plate source: up to 1 kW at 13.56 MHz
• Gases installed on the system: Ar, He, H₂, C₄F₈, O₂, CF₄
• Sample size: substrates up to 150 mm diameter; Compatible with small samples

Examples of available processes

• Etching of silicon oxide
• Etching of silicon nitride