Plasma Etcher STS Advanced Oxide AOE
![Plasma Etcher STS Advanced Oxide AOE](/3it/fileadmin/_processed_/b/c/csm_AOE_a21dab6999.jpg)
Description
Etching of high-density plasma dielectric materials
Manufacturer & model
STS - AOE
Technical specifications
- Temperature of electrode (plate): -20°C to 70°C
- ICP source: up to 3 kW at 13.56 MHz
- Plate source: up to 1 kW at 13.56 MHz
- Gases installed on the system: Ar, He, H₂, C₄F₈, O₂, CF₄
- Sample size: substrates up to 150 mm diameter; Compatible with small samples
Examples of available processes
- Etching of silicon oxide
- Etching of silicon nitride