Plasma Etcher STS Advanced Silicon Etch ASE

Description

Silicon etching by high-density plasma or XeF₂ etching

Manufacturer and model

STS - Multiplex Advanced Silicon Etch (ASE-SR) ICP system

Technical specifications

• Temperature of the electrode (plate): 5 to 40 ° C
• ICP source: up to 1 kW at 13.56 MHz
• Plate source: 0-300 W at 13.56 MHz, or 0-300 W @ 380 kHz
• Process gases installed on the system: Ar, SF₆, C₄F₈, O₂
• Sample size: substrates up to 100 mm diameter; Possibility to work with small samples

Examples of available processes

• Etching of Si and Ge.
• Deep engraving for MEMS
• Bosch etching (alternating etching steps and passivation)
• Etching by semi-Bosch procedure
• Etching of SOI
• Isotropic etching of Si