Physical modeling and strain analysis of III-V laser structures

Project Description

Project description
Strain of the III-V semiconductor heterostructures is observed during its manufacturing processes. When used for laser fabrication, those strained heterostructures lead to a decrease in optoelectronic performances or wafer thinning mechanical failure. The objective of this project is to develop new design structures based on analysis of the strained III-V semiconductor heterostructures and its modeling. 


Main tasks
-Physical modeling of strain in laser structures using COMSOL
-Optimization of III-V laser structures to minimize strain and enhanced performance
-Comprehensive materials characterization using SEM, TEM, EDX, profilometry, XRD, photoluminescence, etc.
-Regular follow-up meetings with the industrial partner


Your profile
-Master's degree  in physics, materials science, nanotechnology or a related field
-Assets: Knowledge of photonics, optoelectronics and semiconductor physics
-Experience in physical modeling, materials characterization and epitaxy
-Ability to work autonomously 
-Strong interpersonal skills and ability to work effectively in a team with individuals from diverse backgrounds


Working environment
The thesis work will be carried out primarily at the Interdisciplinary Institute for Technological Innovation (3IT) at the University of Sherbrooke, under the supervision of Prof. Gwenaëlle Hamon and in collaboration with an industrial partner.

To submit your application : recrutement-groupe-hamon@usherbrooke.ca

Funding offered

To be discussed

The last update was on 12 September 2024. The University reserves the right to modify its projects without notice.